Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. (2016)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/srep30775
PubMed Identifier: 27488426
Publication URI: http://europepmc.org/abstract/MED/27488426
Type: Journal Article/Review
Volume: 6
Parent Publication: Scientific reports
ISSN: 2045-2322