Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. (2016)

First Author: Gubicza A
Attributed to:  Transition-edge sensors: achieving true potential funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/srep30775

PubMed Identifier: 27488426

Publication URI: http://europepmc.org/abstract/MED/27488426

Type: Journal Article/Review

Volume: 6

Parent Publication: Scientific reports

ISSN: 2045-2322