Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas (2016)

First Author: Morrison C
Attributed to:  Spintronic device physics in Si/Ge Heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4962432

Publication URI: http://dx.doi.org/10.1063/1.4962432

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10