Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition (2016)
Attributed to:
Spintronic device physics in Si/Ge Heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2016.03.038
Publication URI: http://dx.doi.org/10.1016/j.mee.2016.03.038
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering