Structural and optical properties of (112¯2) InGaN quantum wells compared to (0001) and (112¯0) (2016)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/31/8/085007
Publication URI: http://dx.doi.org/10.1088/0268-1242/31/8/085007
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 8