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(Invited) Stability under Gate Bias Stressing of Amorphous Oxide Thin Film Transistors (2016)

First Author: Niang K

Attributed to: The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/07510.0179ecst

Publication URI: http://dx.doi.org/10.1149/07510.0179ecst

Type: Journal Article/Review

Parent Publication: ECS Transactions

Issue: 10