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Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5) x (Al2O3)1- x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors (2016)

First Author: Partida-Manzanera T

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4939298

Publication URI: http://dx.doi.org/10.1063/1.4939298

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 2