Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices. (2016)

First Author: Wimmer Y
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1098/rspa.2016.0009

PubMed Identifier: 27436969

Publication URI: http://europepmc.org/abstract/MED/27436969

Type: Journal Article/Review

Volume: 472

Parent Publication: Proceedings. Mathematical, physical, and engineering sciences

Issue: 2190

ISSN: 1364-5021