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Nanoscale fissure formation in Al x Ga 1- x N/GaN heterostructures and their influence on Ohmic contact formation (2016)

First Author: Smith M

Attributed to: Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600353

Publication URI: http://dx.doi.org/10.1002/pssa.201600353

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 1