Nanoscale fissure formation in Al x Ga 1- x N/GaN heterostructures and their influence on Ohmic contact formation (2016)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600353
Publication URI: http://dx.doi.org/10.1002/pssa.201600353
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 1