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Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells (2016)

First Author: Bai J

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.solmat.2015.10.026

Publication URI: http://dx.doi.org/10.1016/j.solmat.2015.10.026

Type: Journal Article/Review

Parent Publication: Solar Energy Materials and Solar Cells