MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications (2016)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apmt.2016.09.018
Publication URI: http://dx.doi.org/10.1016/j.apmt.2016.09.018
Type: Journal Article/Review
Parent Publication: Applied Materials Today