Growth of free-standing bulk wurtzite Al Ga1-N layers by molecular beam epitaxy using a highly efficient RF plasma source (2016)
Attributed to:
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.07.038
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.07.038
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth