Growth of free-standing bulk wurtzite Al Ga1-N layers by molecular beam epitaxy using a highly efficient RF plasma source (2016)

First Author: Novikov S
Attributed to:  Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.07.038

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.07.038

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth