Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices (2016)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2016.03.058
Publication URI: http://dx.doi.org/10.1016/j.mee.2016.03.058
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering