Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. (2016)
Attributed to:
Nitride Photovoltaic Materials for Full Spectrum Utilization
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.6b02061
PubMed Identifier: 27458736
Publication URI: http://europepmc.org/abstract/MED/27458736
Type: Journal Article/Review
Volume: 16
Parent Publication: Nano letters
Issue: 8
ISSN: 1530-6984