📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! Tell us what works, what doesn't, and how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community. Please send your feedback to gateway@ukri.org by 11 August 2025.

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells (2016)

First Author: Dawson P

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4948237

Publication URI: http://dx.doi.org/10.1063/1.4948237

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 18