Advanced physical modeling of SiOx resistive random access memories (2016)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/sispad.2016.7605169
Publication URI: http://dx.doi.org/10.1109/sispad.2016.7605169
Type: Conference/Paper/Proceeding/Abstract