Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels (2016)
Attributed to:
Engineering Quantum Technology Systems on a Silicon Platform
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/nmdc.2016.7777084
Publication URI: http://dx.doi.org/10.1109/nmdc.2016.7777084
Type: Conference/Paper/Proceeding/Abstract