Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides (2016)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4960689
Publication URI: http://dx.doi.org/10.1063/1.4960689
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 6