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Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs (2016)

First Author: Chatterjee I

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/irps.2016.7574529

Publication URI: http://dx.doi.org/10.1109/irps.2016.7574529

Type: Conference/Paper/Proceeding/Abstract

ISSN: 15417026