Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics (2016)

First Author: Roberts J
Attributed to:  EPSRC Manufacturing Fellowship in Gallium Nitride funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4942093

Publication URI: http://dx.doi.org/10.1063/1.4942093

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 7

ISSN: 00036951