Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth (2017)
Attributed to:
EPSRC Manufacturing Fellowship in Gallium Nitride
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.12.025
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.12.025
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
ISSN: 00220248