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Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth (2017)

First Author: Qian H

Attributed to: EPSRC Manufacturing Fellowship in Gallium Nitride funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.12.025

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.12.025

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

ISSN: 00220248