Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters (2015)

First Author: Roscoe N
Attributed to:  High-temperature Silicon Carbide Electronics (HITSIC) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iecon.2015.7392188

Publication URI: http://dx.doi.org/10.1109/iecon.2015.7392188

Type: Conference/Paper/Proceeding/Abstract