Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films (2017)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.actamat.2016.11.039
Publication URI: http://dx.doi.org/10.1016/j.actamat.2016.11.039
Type: Journal Article/Review
Parent Publication: Acta Materialia