Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films (2017)

First Author: Vilalta-Clemente A
Attributed to:  Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.actamat.2016.11.039

Publication URI: http://dx.doi.org/10.1016/j.actamat.2016.11.039

Type: Journal Article/Review

Parent Publication: Acta Materialia