Mechanism of hot electron electroluminescence in GaN-based transistors (2016)

First Author: Brazzini T
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/49/43/435101

Publication URI: http://dx.doi.org/10.1088/0022-3727/49/43/435101

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 43