Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. (2016)

First Author: Summerfield A
Attributed to:  Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/srep22440

PubMed Identifier: 26928710

Publication URI: http://europepmc.org/abstract/MED/26928710

Type: Journal Article/Review

Volume: 6

Parent Publication: Scientific reports

ISSN: 2045-2322