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Molecular beam epitaxy of free-standing bulk wurtzite Al x Ga 1-x N layers using a highly efficient RF plasma source (2016)

First Author: Novikov S

Attributed to: Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201510166

Publication URI: http://dx.doi.org/10.1002/pssc.201510166

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 5-6