Molecular beam epitaxy of free-standing bulk wurtzite Al x Ga 1-x N layers using a highly efficient RF plasma source (2016)
Attributed to:
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201510166
Publication URI: http://dx.doi.org/10.1002/pssc.201510166
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 5-6