Characterization of p-GaN 1- x As x /n-GaN PN junction diodes (2016)
Attributed to:
Amorphous and crystalline GaNAs alloys for solar energy conversion devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/31/6/065020
Publication URI: http://dx.doi.org/10.1088/0268-1242/31/6/065020
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 6
ISSN: 0268-1242