A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers (2016)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4941321
Publication URI: http://dx.doi.org/10.1063/1.4941321
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 5