A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers (2016)

First Author: Davies M
Attributed to:  Nitrides for the 21st century funded by EPSRC


No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4941321

Publication URI: http://dx.doi.org/10.1063/1.4941321

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 5