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Single-electron tunneling through an individual arsenic dopant in silicon. (2017)

First Author: Shorokhov VV

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c6nr07258e

PubMed Identifier: 27942691

Publication URI: http://europepmc.org/abstract/MED/27942691

Type: Journal Article/Review

Volume: 9

Parent Publication: Nanoscale

Issue: 2

ISSN: 2040-3364