Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement (2016)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/iedm.2016.7838466
Publication URI: http://ieeexplore.ieee.org/document/7838466/
Type: Conference/Paper/Proceeding/Abstract