Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement (2016)

First Author: Ma J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iedm.2016.7838466

Publication URI: http://ieeexplore.ieee.org/document/7838466/

Type: Conference/Paper/Proceeding/Abstract