High-quality III-nitride films on conductive, transparent (2¯01)-oriented ß-Ga2O3 using a GaN buffer layer. (2016)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/srep29747
PubMed Identifier: 27412372
Publication URI: http://europepmc.org/abstract/MED/27412372
Type: Journal Article/Review
Volume: 6
Parent Publication: Scientific reports
ISSN: 2045-2322