📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes (2016)

First Author: Presa S

Attributed to: Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4959100

Publication URI: http://dx.doi.org/10.1063/1.4959100

Type: Journal Article/Review

Parent Publication: AIP Advances

Issue: 7