n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon (2016)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/c6tc02825j
Publication URI: http://dx.doi.org/10.1039/c6tc02825j
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry C
Issue: 35