n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon (2016)

First Author: Kakanakova-Georgieva A

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c6tc02825j

Publication URI: http://dx.doi.org/10.1039/c6tc02825j

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 35