Influence of trench period and depth on MOVPE grown ( 11 2 ¯ 2 ) GaN on patterned r-plane sapphire substrates. (2016)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth