Influence of trench period and depth on MOVPE grown ( 11 2 ¯ 2 ) GaN on patterned r-plane sapphire substrates. (2016)
Attributed to:
Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth