Growth and coalescence studies of oriented GaN on pre-structured sapphire substrates using marker layers (2015)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201552266
Publication URI: http://dx.doi.org/10.1002/pssb.201552266
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 1