Growth and coalescence studies of (112?2) oriented GaN on pre-structured sapphire substrates using marker layers Studies of (112?2) oriented GaN using marker layers (2016)

First Author: Caliebe M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201552266

Publication URI: http://dx.doi.org/10.1002/pssb.201552266

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 1