Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD (2017)
Attributed to:
Ultra-parallel visible light communications (UP-VLC)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/50/7/075101
Publication URI: http://dx.doi.org/10.1088/1361-6463/50/7/075101
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 7