Comparative electrothermal analysis between SiC Schottky and silicon PiN diodes: Paralleling and thermal considerations (2016)

First Author: Hu J

Attributed to: Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/epe.2016.7695307

Publication URI: http://dx.doi.org/10.1109/epe.2016.7695307

Type: Conference/Paper/Proceeding/Abstract