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Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission (2016)

First Author: Wang T

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/31/9/093003

Publication URI: http://dx.doi.org/10.1088/0268-1242/31/9/093003

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 9