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Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples (2016)

First Author: Southern-Holland R

Attributed to: GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201510196

Publication URI: http://dx.doi.org/10.1002/pssc.201510196

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 5-6