Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples (2016)

First Author: Southern-Holland R

Attributed to: GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 5-6