Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing (2016)

First Author: Wang T

Attributed to: GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2016.7831115

Publication URI: http://dx.doi.org/10.1109/ipcon.2016.7831115

Type: Conference/Paper/Proceeding/Abstract