Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling (2016)
Attributed to:
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s10825-016-0853-y
Publication URI: http://dx.doi.org/10.1007/s10825-016-0853-y
Type: Journal Article/Review
Parent Publication: Journal of Computational Electronics
Issue: 3