Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. (2015)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma8125454
PubMed Identifier: 28793705
Publication URI: http://europepmc.org/abstract/MED/28793705
Type: Journal Article/Review
Volume: 8
Parent Publication: Materials (Basel, Switzerland)
Issue: 12
ISSN: 1996-1944