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Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures Zinc tin oxide thin film transistors produced by reactive sputtering (2017)

First Author: Niang K

Attributed to: The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600470

Publication URI: http://dx.doi.org/10.1002/pssa.201600470

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 2