Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures Zinc tin oxide thin film transistors produced by reactive sputtering (2017)

First Author: Niang K
Attributed to:  The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600470

Publication URI: http://dx.doi.org/10.1002/pssa.201600470

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 2